Taiwan Semiconductor has expanded its product portfolio with 40V and 60V dual N-channel power mosfet in a PDFN56 dual package.

The mosfets (TSM110NB04DCR, TSM150NB04DCR, TSM250NB06DCR, TSM300NB06DCR) are available with 40V/60V breakdown voltages 25-38A current ratings and an RDSon of 15-30mΩ. The maximum junction temperature is 150°C. Thanks to a low gate charge, fast switching frequencies are possible, the company claims.

All of the mosfets are avalanche and Rg tested. Taiwan Semiconductor further says they have a very low on-resistance to minimize conduction losses. In addition, they meet RoHS requirements and are halogen-free. Possible applications include BLDC motor control, battery power management, DC-DC converter and secondary synchronous rectification.