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Toshiba Semiconductor & Storage RN1110ACT(TPL3)

RN1110ACT(TPL3) picture photo
Mfg. Part Number
RN1110ACT(TPL3)
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 0.1W CST3
Datasheet Download
RN1110ACT(TPL3).pdf
Availability of RN1110ACT(TPL3)

Available Quantity

15020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.03968
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of RN1110ACT(TPL3), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1110ACT(TPL3) can be shipped within 24 hours after order. If you have any demands for RN1110ACT(TPL3), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1110ACT(TPL3) Order Process
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Specifications of RN1110ACT(TPL3)
Internal Part NumberEIS-RN1110ACT(TPL3)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package10,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)80mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1110ACT(TPL3)
Related LinksRN1110A, RN1110ACT(TPL3) Datasheet, Toshiba Semiconductor & Storage Distributor
RN1110ACT(TPL3) Details Description
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