Vishay/Siliconix SI2309DS-T1-E3

SI2309DS-T1-E3 picture photo
Mfg. Part Number
SI2309DS-T1-E3
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET P-CH 60V 1.25A SOT23-3
Datasheet Download
SI2309DS-T1-E3.pdf
Availability of SI2309DS-T1-E3

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
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Our Price
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EIS Components is the stocking Distributor of SI2309DS-T1-E3, we specialize in Vishay/Siliconix all series electronic components. SI2309DS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2309DS-T1-E3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SI2309DS-T1-E3 Order Process
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Specifications of SI2309DS-T1-E3
Internal Part NumberEIS-SI2309DS-T1-E3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
EDA / CAD ModelsDownload from Accelerated Designs
Standard Package3,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesTrenchFET®
PackagingTape & Reel (TR)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs340 mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) @ Vgs12nC @ 10V
Input Capacitance (Ciss) @ Vds-
Power - Max1.25W
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SI2309DS-T1-E3
Related LinksSI2309D, SI2309DS-T1-E3 Datasheet, Vishay/Siliconix Distributor
SI2309DS-T1-E3 Details Description
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