Toshiba’s Cortex-M MCU roadmap includes SONOS memory

Author:OMO Release Date: Mar 24, 2020


Toshiba has revealed its Arm Cortex-M microcontroller plans, announcing 200MHz (254 DMIPS) 40nm parts “dissipating approximately 30% lower dynamic power compared to the existing* 65nm devices”, it said, and 130nm parts with SONOS memory.

The family is split into two device classes:

TXZxA+ (A for ‘advanced’) in 40nm with either an Arm Cortex-M3 or a Cortex-M4 with floating point unit (FPU).

TXZxE+ (E for ‘entry’) in 130nm CMOS with either Arm Cortex-M0, Cortex-M3, or Cortex-M4 core, with SONOS memory instead of flash.

“Enriched by Toshiba’s original IP blocks, the devices are suitable for a variety of target applications such as home appliances, industrial and motor control applications as well as communication and data processing,” according to the company.

The TXZxA+ line-up of will be “functionally aligned pin-compatible to the existing 65nm TXZ devices enabling customers to seamlessly migrate to the new microcontroller family”, said Toshiba.

Features will include a built-in high-precision oscillator (precision as yet specified) and a single supply regulator what does not need external capacitors.

The information given to Electronics Weekly also mentions ‘pre-drivers’, without further explanation – Toshiba generally uses this phrase to describe mosfet gate drivers, to drive external mosfetes that go on to drive motors or d relays – clarification has been sought.

A common register map and intra-family footprint compatibility will simplify design and re-use, said the company.

Initial engineering samples are scheduled for Q3 this year, then customer samples and mass production in Q2 2021.

TXZxE+ parts will be for basic control applications, and manufactured by Toshiba subsidiary Japan Semiconductor Corporation. They will be the first Toshiba MCUs with silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory instead of flash.

Floadia-SONOSThe company co-operated with Floadia to develop this memory, it is Floadia’s G1 SONOS, which is said to be less leaky that flash (right).

Initial engineering samples are scheduled for Q2, while customer samples and mass production are scheduled for Q4 2020.

At lease some TXZ+ parts will be rated for operation up to +125°C for harsh industrial environments.

*Footnote

68µA/MHz against 100µA/MHz for existing TMPM4G9F15FG.