Vishay Semiconductor/Diodes Division 1N6483HE3/97

1N6483HE3/97 picture photo
Mfg. Part Number
1N6483HE3/97
Manufacturer
Product Category
Diodes, Rectifiers - Single
Brief Description
DIODE GEN PURP 800V 1A DO213AB
Datasheet Download
1N6483HE3/97.pdf
Availability of 1N6483HE3/97

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.11455
Our Price
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EIS Components is the stocking Distributor of 1N6483HE3/97, we specialize in Vishay Semiconductor/Diodes Division all series electronic components. 1N6483HE3/97 can be shipped within 24 hours after order. If you have any demands for 1N6483HE3/97, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
1N6483HE3/97 Order Process
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Specifications of 1N6483HE3/97
Internal Part NumberEIS-1N6483HE3/97
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package5,000
Category Discrete Semiconductor Products
FamilyDiodes, Rectifiers - Single
SeriesSUPERECTIFIER®
PackagingTape & Reel (TR)
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.1V @ 1A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 800V
Capacitance @ Vr, F8pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-213AB, MELF (Glass)
Supplier Device PackageDO-213AB
Operating Temperature - Junction-65°C ~ 175°C
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)1N6483HE3/97
Related Links1N6483, 1N6483HE3/97 Datasheet, Vishay Semiconductor/Diodes Division Distributor
1N6483HE3/97 Details Description
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