Vishay Semiconductor/Diodes Division 1N6484HE3/97
- Mfg. Part Number
- 1N6484HE3/97
- Manufacturer
- Vishay Semiconductor/Diodes Division
- Product Category
- Diodes, Rectifiers - Single
- Brief Description
- DIODE GEN PURP 1KV 1A DO213AB
- Datasheet Download
- 1N6484HE3/97.pdf
Availability of 1N6484HE3/97
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 0.11455
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of 1N6484HE3/97, we specialize in Vishay Semiconductor/Diodes Division all series electronic components. 1N6484HE3/97 can be shipped within 24 hours after order. If you have any demands for 1N6484HE3/97, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- 1N6484HE3/97 Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
1N6484HE3/97
| Internal Part Number | EIS-1N6484HE3/97 | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 5,000 | |
| Category | Discrete Semiconductor Products | |
| Family | Diodes, Rectifiers - Single | |
| Series | SUPERECTIFIER® | |
| Packaging | Tape & Reel (TR) | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1000V (1kV) | |
| Current - Average Rectified (Io) | 1A | |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 10µA @ 1000V | |
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-213AB, MELF (Glass) | |
| Supplier Device Package | DO-213AB | |
| Operating Temperature - Junction | -65°C ~ 175°C | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | 1N6484HE3/97 | |
| Related Links | 1N6484, 1N6484HE3/97 Datasheet, Vishay Semiconductor/Diodes Division Distributor | |
1N6484HE3/97 Details Description
Related parts for 1N6484HE3/97
 | ACA22DRSN-S288 | CONN EDGECARD EXTEND 44POS .125 | datasheet.pdf | |
 | SI7964DP-T1-E3 | MOSFET 2N-CH 60V 6.1A PPAK SO-8 | datasheet.pdf | |
 | TLC082IDG4 | IC OPAMP GP 10MHZ 8SOIC | datasheet.pdf | |
| TXR54SJ00-2812BI | CONN BACKSHELL ADPT SZ 28 | datasheet.pdf | |
| RNR55J1003BSRSL | RES 100K OHM 1/8W .1% AXIAL | datasheet.pdf | |
 | RNC60H3741FSB14 | RES 3.74K OHM 1/4W 1% AXIAL | datasheet.pdf | |
 | SI8439DB-T1-E1 | MOSFET P-CH 8V MICROFOOT | datasheet.pdf | |
 | 7M-27.120MAAE-T | Crystal 27.1200MHz 30ppm 12pF 60 Ohm -20°C - 70°C Surface Mount 4-SMD, No Lead (DFN, LCC) | datasheet.pdf | |
.jpg) | WB58-Q | BRONZE GROUNDING ROD CLAMP 5/8 | datasheet.pdf | |
| CTV07RF-17-73SD-S1 | HD 38999 73C 73#23 SKT RECP | datasheet.pdf | |
| 3-1907115-5 | FO C/A LC BLU MTRJ 50/125 ORN | datasheet.pdf | |
 | XC5VLX50-2FFV676I | Field Programmable Gate Array, 3600 CLBs, 46080-Cell, PBGA676 IC | datasheet.pdf |