Vishay/Siliconix 2N5116JTVL02
- Mfg. Part Number
- 2N5116JTVL02
- Manufacturer
- Vishay/Siliconix
- Product Category
- JFETs (Junction Field Effect)
- Brief Description
- JFET P-CH 30V TO-18
- Datasheet Download
- 2N5116JTVL02.pdf
Availability of 2N5116JTVL02
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 97.02000
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of 2N5116JTVL02, we specialize in Vishay/Siliconix all series electronic components. 2N5116JTVL02 can be shipped within 24 hours after order. If you have any demands for 2N5116JTVL02, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- 2N5116JTVL02 Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
2N5116JTVL02
| Internal Part Number | EIS-2N5116JTVL02 | |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 20 | |
| Category | Discrete Semiconductor Products | |
| Family | JFETs (Junction Field Effect) | |
| Series | - | |
| Packaging | Tube | |
| FET Type | - | |
| Voltage - Breakdown (V(BR)GSS) | - | |
| Drain to Source Voltage (Vdss) | - | |
| Current - Drain (Idss) @ Vds (Vgs=0) | - | |
| Current Drain (Id) - Max | - | |
| Voltage - Cutoff (VGS off) @ Id | - | |
| Input Capacitance (Ciss) @ Vds | - | |
| Resistance - RDS(On) | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Supplier Device Package | TO-206AA (TO-18) | |
| Power - Max | - | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | 2N5116JTVL02 | |
| Related Links | 2N5116, 2N5116JTVL02 Datasheet, Vishay/Siliconix Distributor | |
2N5116JTVL02 Details Description
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