Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-2N6660JTVP02 | |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 20 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Tube | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 990mA (Tc) | |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 1A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 1mA | |
Gate Charge (Qg) @ Vgs | - | |
Input Capacitance (Ciss) @ Vds | 50pF @ 25V | |
Power - Max | 725mW | |
Mounting Type | Through Hole | |
Package / Case | TO-205AD, TO-39-3 Metal Can | |
Supplier Device Package | TO-39 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | 2N6660JTVP02 | |
Related Links | 2N6660, 2N6660JTVP02 Datasheet, Vishay/Siliconix Distributor |
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