Vishay/Siliconix 2N6661JAN02

2N6661JAN02 picture photo
Mfg. Part Number
2N6661JAN02
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 90V 0.86A TO-205
Datasheet Download
2N6661JAN02.pdf
Availability of 2N6661JAN02

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 270.64000
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of 2N6661JAN02, we specialize in Vishay/Siliconix all series electronic components. 2N6661JAN02 can be shipped within 24 hours after order. If you have any demands for 2N6661JAN02, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
2N6661JAN02 Order Process
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Specifications of 2N6661JAN02
Internal Part NumberEIS-2N6661JAN02
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package20
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)90V
Current - Continuous Drain (Id) @ 25°C860mA (Tc)
Rds On (Max) @ Id, Vgs4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds50pF @ 25V
Power - Max725mW
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)2N6661JAN02
Related Links2N666, 2N6661JAN02 Datasheet, Vishay/Siliconix Distributor
2N6661JAN02 Details Description
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