ON Semiconductor 2SD1012G-SPA
- Mfg. Part Number
- 2SD1012G-SPA
- Manufacturer
- ON Semiconductor
- Product Category
- Transistors (BJT) - Single
- Brief Description
- TRANS NPN 15V 0.7A SPA
- Datasheet Download
- 2SD1012G-SPA.pdf
Availability of 2SD1012G-SPA
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 0.11550
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of 2SD1012G-SPA, we specialize in ON Semiconductor all series electronic components. 2SD1012G-SPA can be shipped within 24 hours after order. If you have any demands for 2SD1012G-SPA, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- 2SD1012G-SPA Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
2SD1012G-SPA
| Internal Part Number | EIS-2SD1012G-SPA | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 500 | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors (BJT) - Single | |
| Series | - | |
| Packaging | Bulk | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 700mA | |
| Voltage - Collector Emitter Breakdown (Max) | 15V | |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 10mA, 100mA | |
| Current - Collector Cutoff (Max) | 1µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 50mA, 2V | |
| Power - Max | 250mW | |
| Frequency - Transition | 250MHz | |
| Mounting Type | Through Hole | |
| Package / Case | 3-SIP | |
| Supplier Device Package | 3-SPA | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | 2SD1012G-SPA | |
| Related Links | 2SD101, 2SD1012G-SPA Datasheet, ON Semiconductor Distributor | |
2SD1012G-SPA Details Description
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