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Toshiba Semiconductor & Storage 2SK3667(Q)

2SK3667(Q) picture photo
Mfg. Part Number
2SK3667(Q)
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 600V 7.5A TO220SIS
Datasheet Download
2SK3667(Q).pdf
Availability of 2SK3667(Q)

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 2.06260
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of 2SK3667(Q), we specialize in Toshiba Semiconductor & Storage all series electronic components. 2SK3667(Q) can be shipped within 24 hours after order. If you have any demands for 2SK3667(Q), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
2SK3667(Q) Order Process
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Specifications of 2SK3667(Q)
Internal Part NumberEIS-2SK3667(Q)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
EDA / CAD ModelsDownload from Accelerated Designs
Standard Package50
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingBulk
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Rds On (Max) @ Id, Vgs1 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) @ Vgs33nC @ 10V
Input Capacitance (Ciss) @ Vds1300pF @ 25V
Power - Max45W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220SIS
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)2SK3667(Q)
Related Links2SK36, 2SK3667(Q) Datasheet, Toshiba Semiconductor & Storage Distributor
2SK3667(Q) Details Description
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