Toshiba Semiconductor & Storage 2SK3767(Q,M)

2SK3767(Q,M) picture photo
Mfg. Part Number
2SK3767(Q,M)
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 600V 2A TO-220SIS
Datasheet Download
2SK3767(Q,M).pdf
Availability of 2SK3767(Q,M)

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of 2SK3767(Q,M), we specialize in Toshiba Semiconductor & Storage all series electronic components. 2SK3767(Q,M) can be shipped within 24 hours after order. If you have any demands for 2SK3767(Q,M), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
2SK3767(Q,M) Order Process
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Specifications of 2SK3767(Q,M)
Internal Part NumberEIS-2SK3767(Q,M)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package50
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs4.5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) @ Vgs9nC @ 10V
Input Capacitance (Ciss) @ Vds320pF @ 10V
Power - Max25W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220SIS
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)2SK3767(Q,M)
Related Links2SK376, 2SK3767(Q,M) Datasheet, Toshiba Semiconductor & Storage Distributor
2SK3767(Q,M) Details Description
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