Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-71256S70DB | |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| PCN Design/Specification | Lot Mark Update 13/Apr/2015 Adhesive Material Update 28/Apr/2015 | |
| Standard Package | 13 | |
| Category | Integrated Circuits (ICs) | |
| Family | Memory | |
| Series | - | |
| Packaging | Tube | |
| Format - Memory | RAM | |
| Memory Type | SRAM - Asynchronous | |
| Memory Size | 256K (32K x 8) | |
| Speed | 70ns | |
| Interface | Parallel | |
| Voltage - Supply | 4.5 V ~ 5.5 V | |
| Operating Temperature | -55°C ~ 125°C | |
| Package / Case | 28-CDIP (0.600", 15.24mm) | |
| Supplier Device Package | 28-CDIP | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | 71256S70DB | |
| Related Links | 71256, 71256S70DB Datasheet, Integrated Device Technology (IDT) Distributor | |
![]() | ERJ-S14F5623U | RES SMD 562K OHM 1% 1/2W 1210 | datasheet.pdf | |
![]() | RT0402CRD0719K6L | RES SMD 19.6K OHM 1/16W 0402 | datasheet.pdf | |
![]() | NOSA106M006R0800 | CAP NIOB OXID 10UF 20% 6.3V 1206 | datasheet.pdf | |
![]() | MAX6386XS31D3+T | IC MPU/RESET CIRC 3.08V SC70-4 | datasheet.pdf | |
![]() | PWR1913WR039FE | RES SMD 0.039 OHM 1% 1/2W 1913 | datasheet.pdf | |
![]() | 903-375 | ROUND SPACER 0.047" NYLON 3/8" | datasheet.pdf | |
![]() | CMF6546K400FKRE | RES 46.4K OHM 1.5W 1% AXIAL | datasheet.pdf | |
![]() | C3216JB2J333K160AA | CAP CER 0.033UF 630V JB 1206 | datasheet.pdf | |
![]() | 1873310030 | CABLE CONN 2POLE MAGENTA | datasheet.pdf | |
![]() | C8051F853-C-GUR | IC MCU 8051 8KB QSOP24 | datasheet.pdf | |
![]() | ECC10DPPS | CONN EDGECARD 20POS .100" | datasheet.pdf | |
![]() | REF01HS | 10 V Precision Voltage Reference IC | datasheet.pdf |