Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-APTM100VDA35T3G | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 1 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Arrays | |
| Series | POWER MOS 7® | |
| Packaging | Bulk | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 22A | |
| Rds On (Max) @ Id, Vgs | 420 mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Gate Charge (Qg) @ Vgs | 186nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 5200pF @ 25V | |
| Power - Max | 390W | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP3 | |
| Supplier Device Package | SP3 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | APTM100VDA35T3G | |
| Related Links | APTM100, APTM100VDA35T3G Datasheet, Microsemi Power Products Distributor | |
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