Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-BS108,126 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | Obsolete / Discontinued | |
Condition | New & Unused, Original Sealed | |
Standard Package | 2,000 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Tape & Box (TB) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 200V | |
Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) | |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 100mA, 2.8V | |
Vgs(th) (Max) @ Id | 1.8V @ 1mA | |
Gate Charge (Qg) @ Vgs | - | |
Input Capacitance (Ciss) @ Vds | 120pF @ 25V | |
Power - Max | 1W | |
Mounting Type | Through Hole | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
Supplier Device Package | TO-92-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | BS108,126 | |
Related Links | BS10, BS108,126 Datasheet, NXP Semiconductors/Freescale Semiconductor, Inc. Distributor |
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