Infineon Technologies BSB056N10NN3 G

BSB056N10NN3 G picture photo
Mfg. Part Number
BSB056N10NN3 G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 9A WDSON-2
Datasheet Download
BSB056N10NN3 G.pdf
Availability of BSB056N10NN3 G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 1.22076
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of BSB056N10NN3 G, we specialize in Infineon Technologies all series electronic components. BSB056N10NN3 G can be shipped within 24 hours after order. If you have any demands for BSB056N10NN3 G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
BSB056N10NN3 G Order Process
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Specifications of BSB056N10NN3 G
Internal Part NumberEIS-BSB056N10NN3 G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs5.6 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3.5V @ 100µA
Gate Charge (Qg) @ Vgs74nC @ 10V
Input Capacitance (Ciss) @ Vds5500pF @ 50V
Power - Max78W
Mounting TypeSurface Mount
Package / Case3-WDSON
Supplier Device PackageMG-WDSON-2, CanPAK M™
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSB056N10NN3 G
Related LinksBSB056N, BSB056N10NN3 G Datasheet, Infineon Technologies Distributor
BSB056N10NN3 G Details Description
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