Infineon Technologies BSC026N02KS G

BSC026N02KS G picture photo
Mfg. Part Number
BSC026N02KS G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 20V 100A TDSON-8
Datasheet Download
BSC026N02KS G.pdf
Availability of BSC026N02KS G

Available Quantity

25020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.49752
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EIS Components is the stocking Distributor of BSC026N02KS G, we specialize in Infineon Technologies all series electronic components. BSC026N02KS G can be shipped within 24 hours after order. If you have any demands for BSC026N02KS G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
BSC026N02KS G Order Process
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Specifications of BSC026N02KS G
Internal Part NumberEIS-BSC026N02KS G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN OtherMultiple Changes 09/Jul/2014
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs2.6 mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 200µA
Gate Charge (Qg) @ Vgs52.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds7800pF @ 10V
Power - Max78W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSC026N02KS G
Related LinksBSC026, BSC026N02KS G Datasheet, Infineon Technologies Distributor
BSC026N02KS G Details Description
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