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Infineon Technologies BSC029N025S G

BSC029N025S G picture photo
Mfg. Part Number
BSC029N025S G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 25V 100A TDSON-8
Datasheet Download
BSC029N025S G.pdf
Availability of BSC029N025S G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of BSC029N025S G, we specialize in Infineon Technologies all series electronic components. BSC029N025S G can be shipped within 24 hours after order. If you have any demands for BSC029N025S G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
BSC029N025S G Order Process
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Specifications of BSC029N025S G
Internal Part NumberEIS-BSC029N025S G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLMultiple Devices 11/Dec/2009
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs2.9 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 80µA
Gate Charge (Qg) @ Vgs41nC @ 5V
Input Capacitance (Ciss) @ Vds5090pF @ 15V
Power - Max78W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSC029N025S G
Related LinksBSC029, BSC029N025S G Datasheet, Infineon Technologies Distributor
BSC029N025S G Details Description
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