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Infineon Technologies BSC109N10NS3 G

BSC109N10NS3 G picture photo
Mfg. Part Number
BSC109N10NS3 G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 63A 8TDSON
Datasheet Download
BSC109N10NS3 G.pdf
Availability of BSC109N10NS3 G

Available Quantity

15020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.38940
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of BSC109N10NS3 G, we specialize in Infineon Technologies all series electronic components. BSC109N10NS3 G can be shipped within 24 hours after order. If you have any demands for BSC109N10NS3 G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
BSC109N10NS3 G Order Process
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Specifications of BSC109N10NS3 G
Internal Part NumberEIS-BSC109N10NS3 G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN OtherMultiple Changes 09/Jul/2014
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Rds On (Max) @ Id, Vgs10.9 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id3.5V @ 45µA
Gate Charge (Qg) @ Vgs35nC @ 10V
Input Capacitance (Ciss) @ Vds2500pF @ 50V
Power - Max78W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSC109N10NS3 G
Related LinksBSC109N, BSC109N10NS3 G Datasheet, Infineon Technologies Distributor
BSC109N10NS3 G Details Description
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