Infineon Technologies BSC159N10LSF G

BSC159N10LSF G picture photo
Mfg. Part Number
BSC159N10LSF G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 63A TDSON-8
Datasheet Download
BSC159N10LSF G.pdf
Availability of BSC159N10LSF G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.87516
Our Price
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EIS Components is the stocking Distributor of BSC159N10LSF G, we specialize in Infineon Technologies all series electronic components. BSC159N10LSF G can be shipped within 24 hours after order. If you have any demands for BSC159N10LSF G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
BSC159N10LSF G Order Process
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Specifications of BSC159N10LSF G
Internal Part NumberEIS-BSC159N10LSF G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN OtherMultiple Changes 09/Jul/2014
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs15.9 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.4V @ 72µA
Gate Charge (Qg) @ Vgs35nC @ 10V
Input Capacitance (Ciss) @ Vds2500pF @ 50V
Power - Max114W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSC159N10LSF G
Related LinksBSC159N, BSC159N10LSF G Datasheet, Infineon Technologies Distributor
BSC159N10LSF G Details Description
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