Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-BSM120D12P2C005 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Featured Product | Full-SiC Half-Bridge Power Modules 1200 V Silicon Carbide (SiC) Diodes | |
Standard Package | 12 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Arrays | |
Series | - | |
Packaging | Bulk | |
FET Type | 2 N-Channel (Half Bridge) | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Current - Continuous Drain (Id) @ 25°C | 120A | |
Rds On (Max) @ Id, Vgs | - | |
Vgs(th) (Max) @ Id | 2.7V @ 22mA | |
Gate Charge (Qg) @ Vgs | - | |
Input Capacitance (Ciss) @ Vds | 14000pF @ 10V | |
Power - Max | 780W | |
Mounting Type | * | |
Package / Case | Module | |
Supplier Device Package | Module | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | BSM120D12P2C005 | |
Related Links | BSM120D, BSM120D12P2C005 Datasheet, Rohm Semiconductor Distributor |
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