Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-BSN20BKR | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Featured Product | 60 V, N-Channel Trench MOSFET | |
Standard Package | 1 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Cut Tape (CT) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 265mA (Ta) | |
Rds On (Max) @ Id, Vgs | 2.8 Ohm @ 200mA, 10V | |
Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 0.49nC @ 4.5V | |
Input Capacitance (Ciss) @ Vds | 20.2pF @ 30V | |
Power - Max | 310mW | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Supplier Device Package | TO-236AB | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | BSN20BKR | |
Related Links | BSN2, BSN20BKR Datasheet, NXP Semiconductors/Freescale Semiconductor, Inc. Distributor |
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