Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-BSP298H6327XUSA1 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 1 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | SIPMOS® | |
Packaging | Cut Tape (CT) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 400V | |
Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) | |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Gate Charge (Qg) @ Vgs | - | |
Input Capacitance (Ciss) @ Vds | 400pF @ 25V | |
Power - Max | 1.8W | |
Mounting Type | * | |
Package / Case | TO-261-4, TO-261AA | |
Supplier Device Package | PG-SOT223-4 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | BSP298H6327XUSA1 | |
Related Links | BSP298H6, BSP298H6327XUSA1 Datasheet, Infineon Technologies Distributor |
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