Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-CSD16409Q3 | |
| Lead Free Status / RoHS Status | Lead free / RoHS compliant by exemption | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Product Training Modules | NexFET MOSFET Technology | |
| Video File | NexFET Power Block PowerStack™ Packaging Technology Overview | |
| Featured Product | Create your power design now with TI’s WEBENCH® Designer | |
| PCN Design/Specification | Qualification Revision A 01/Jul/2014 | |
| PCN Assembly/Origin | Qualification Assembly/Test Site 03/Mar/2014 Qualification Wire Bond 27/May/2014 Assembly/Test Site Revision C 09/Feb/2015 | |
| Manufacturer Product Page | CSD16409Q3 Specifications | |
| Standard Package | 2,500 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | NexFET™ | |
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 25V | |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 60A (Tc) | |
| Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 5.6nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 800pF @ 12.5V | |
| Power - Max | 2.6W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TDFN Exposed Pad | |
| Supplier Device Package | 8-SON | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | CSD16409Q3 | |
| Related Links | CSD16, CSD16409Q3 Datasheet, Texas Instruments Distributor | |
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