Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-DS1230Y-200 | |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Mfg Application Notes | Adding Nonvolatile SRAM into Embedded Systems | |
| EDA / CAD Models | Download from Accelerated Designs | |
| Standard Package | 12 | |
| Category | Integrated Circuits (ICs) | |
| Family | Memory | |
| Series | - | |
| Packaging | Tube | |
| Format - Memory | RAM | |
| Memory Type | NVSRAM (Non-Volatile SRAM) | |
| Memory Size | 256K (32K x 8) | |
| Speed | 200ns | |
| Interface | Parallel | |
| Voltage - Supply | 4.5 V ~ 5.5 V | |
| Operating Temperature | 0°C ~ 70°C | |
| Package / Case | 28-DIP Module (0.600", 15.24mm) | |
| Supplier Device Package | 28-EDIP | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | DS1230Y-200 | |
| Related Links | DS123, DS1230Y-200 Datasheet, Maxim Integrated Distributor | |
![]() | MM5Z3V9T1G | DIODE ZENER 3.9V 200MW SOD523 | datasheet.pdf | |
![]() | MP820-200-1% | RES 200 OHM 20W 1% TO220 | datasheet.pdf | |
![]() | NAND512R3A2DZA6E | IC FLASH 512MBIT 63VFBGA | datasheet.pdf | |
![]() | D38999/24SJ4SN | CONN RCPT 56POS JAM NUT W/SCKT | datasheet.pdf | |
![]() | SDR0602-820KL | FIXED IND 82UH 350MA 1.3 OHM SMD | datasheet.pdf | |
![]() | VI-26M-MY-F1 | CONVERTER MOD DC/DC 10V 50W | datasheet.pdf | |
![]() | RNC60J6811FSRE6 | RES 6.81K OHM 1/4W 1% AXIAL | datasheet.pdf | |
![]() | 8953160000 | CABLE CAT5 8COND 26AWG GRN 3.28' | datasheet.pdf | |
![]() | ECA36DCMS | CONN EDGECARD 72POS .125" | datasheet.pdf | |
![]() | BFC237516682 | CAP FILM 6.8NF 5% 630VDC RAD | datasheet.pdf | |
![]() | BACC63CB14-12S10H | 26500 9#20 3#16 S BY PLUG LC | datasheet.pdf | |
![]() | CSTCC8.00MGATC | Capacitors Inductors Filters... | datasheet.pdf |