EPC EPC2012

EPC2012 picture photo
Mfg. Part Number
EPC2012
Manufacturer
Product Category
FETs - Single
Brief Description
TRANS GAN 200V 3A BUMPED DIE
Datasheet Download
EPC2012.pdf
Availability of EPC2012

Available Quantity

6307 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 1.33200
Our Price
Quote by Email

QUANTITY

 

EIS Components is the stocking Distributor of EPC2012, we specialize in EPC all series electronic components. EPC2012 can be shipped within 24 hours after order. If you have any demands for EPC2012, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
EPC2012 Order Process
Add Parts to RFQ form
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We reply within 24 hours
You confirm order
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Specifications of EPC2012
Internal Part NumberEIS-EPC2012
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Mfg Application NotesSecond Generation eGaN® FETs
Assembling eGaN® FETs
Using eGaN® FETs
Product Training ModulesParalleling eGaN® FETs
Video FileEPC eGaN FETs -- Another Geek Moment | DigiKey
Featured ProductEPC Low Voltage eGaN® FETs
PCN Design/SpecificationEPC20xx Material 10/Apr/2013
PCN Assembly/OriginEPC2yyy Family Process Change 14/Dec/2013
PCN OtherMultiple Changes 24/Jun/2014
Standard Package1
Category Discrete Semiconductor Products
FamilyFETs - Single
SerieseGaN®
PackagingCut Tape (CT)
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs100 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) @ Vgs1.8nC @ 5V
Input Capacitance (Ciss) @ Vds145pF @ 100V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)EPC2012
Related LinksEPC, EPC2012 Datasheet, EPC Distributor
EPC2012 Details Description
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