Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-EPC2015 | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Mfg Application Notes | Second Generation eGaN® FETs Assembling eGaN® FETs Using eGaN® FETs | |
| Product Training Modules | eGaN FET Reliability Second Gen Lead Free eGaN FETs Overview Paralleling eGaN® FETs Driving eGaN FETs with LM5113 | |
| Video File | EPC eGaN FETs -- Another Geek Moment | DigiKey | |
| RoHS Information | Lead Free/RoHS Statement | |
| Featured Product | eGaN™ FETs Demo Board EPC9101 EPC Low Voltage eGaN® FETs | |
| Reference Design Library | EPC9107: 3.3V @ 15A, 9 ~ 28V in | |
| PCN Design/Specification | EPC20xx Material 10/Apr/2013 | |
| PCN Assembly/Origin | EPC2yyy Family Process Change 12/Dec/2013 | |
| Standard Package | 1 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | eGaN® | |
| Packaging | Cut Tape (CT) | |
| FET Type | GaNFET N-Channel, Gallium Nitride | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 40V | |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) | |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 33A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA | |
| Gate Charge (Qg) @ Vgs | 11.6nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 20V | |
| Power - Max | - | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die Outline (11-Solder Bar) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | EPC2015 | |
| Related Links | EPC, EPC2015 Datasheet, EPC Distributor | |
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