EPC EPC2100ENG

EPC2100ENG picture photo
Mfg. Part Number
EPC2100ENG
Manufacturer
Product Category
FETs - Arrays
Brief Description
TRANS GAN 2N-CH 30V BUMPED DIE
Datasheet Download
EPC2100ENG.pdf
Availability of EPC2100ENG

Available Quantity

5330 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 5.59000
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of EPC2100ENG, we specialize in EPC all series electronic components. EPC2100ENG can be shipped within 24 hours after order. If you have any demands for EPC2100ENG, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
EPC2100ENG Order Process
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Specifications of EPC2100ENG
Internal Part NumberEIS-EPC2100ENG
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Mfg Application NotesGaN Integration for Higher DC-DC Efficiency and Power Density
Product Training ModuleseGaN® Integrated GaN Power
Featured ProductEPC2100 Transistors and EPC9036 Dev Board
EPC - EPC9037/EPC9041 Development Boards
Standard Package10
Category Discrete Semiconductor Products
FamilyFETs - Arrays
SerieseGaN®
PackagingTray
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.5A, 38A
Rds On (Max) @ Id, Vgs8 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id2.5V @ 4mA
Gate Charge (Qg) @ Vgs3.5nC @ 15V
Input Capacitance (Ciss) @ Vds380pF @ 15V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)EPC2100ENG
Related LinksEPC21, EPC2100ENG Datasheet, EPC Distributor
EPC2100ENG Details Description
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