EPC EPC2102ENG

EPC2102ENG picture photo
Mfg. Part Number
EPC2102ENG
Manufacturer
Product Category
FETs - Arrays
Brief Description
TRANS GAN 2N-CH 60V BUMPED DIE
Datasheet Download
EPC2102ENG.pdf
Availability of EPC2102ENG

Available Quantity

5090 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 6.59200
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of EPC2102ENG, we specialize in EPC all series electronic components. EPC2102ENG can be shipped within 24 hours after order. If you have any demands for EPC2102ENG, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
EPC2102ENG Order Process
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Specifications of EPC2102ENG
Internal Part NumberEIS-EPC2102ENG
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModuleseGaN® Integrated GaN Power
Standard Package10
Category Discrete Semiconductor Products
FamilyFETs - Arrays
SerieseGaN®
PackagingTray
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C23A
Rds On (Max) @ Id, Vgs4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id2.5V @ 7mA
Gate Charge (Qg) @ Vgs6.8nC @ 5V
Input Capacitance (Ciss) @ Vds830pF @ 30V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)EPC2102ENG
Related LinksEPC21, EPC2102ENG Datasheet, EPC Distributor
EPC2102ENG Details Description
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