Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-EPC2104ENG | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Product Training Modules | eGaN® Integrated GaN Power | |
Standard Package | 10 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Arrays | |
Series | eGaN® | |
Packaging | Tray | |
FET Type | 2 N-Channel (Half Bridge) | |
FET Feature | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 23A | |
Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 20A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 5.5mA | |
Gate Charge (Qg) @ Vgs | 7nC @ 5V | |
Input Capacitance (Ciss) @ Vds | 800pF @ 50V | |
Power - Max | - | |
Mounting Type | Surface Mount | |
Package / Case | Die | |
Supplier Device Package | Die | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | EPC2104ENG | |
Related Links | EPC21, EPC2104ENG Datasheet, EPC Distributor |
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