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EPC EPC2105ENG

EPC2105ENG picture photo
Mfg. Part Number
EPC2105ENG
Manufacturer
Product Category
FETs - Arrays
Brief Description
TRANS GAN 2N-CH 80V BUMPED DIE
Datasheet Download
EPC2105ENG.pdf
Availability of EPC2105ENG

Available Quantity

5140 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 7.42400
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of EPC2105ENG, we specialize in EPC all series electronic components. EPC2105ENG can be shipped within 24 hours after order. If you have any demands for EPC2105ENG, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
EPC2105ENG Order Process
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Specifications of EPC2105ENG
Internal Part NumberEIS-EPC2105ENG
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Mfg Application NotesGaN Integration for Higher DC-DC Efficiency and Power Density
Product Training ModuleseGaN® Integrated GaN Power
Featured ProductEPC - EPC9037/EPC9041 Development Boards
Standard Package10
Category Discrete Semiconductor Products
FamilyFETs - Arrays
SerieseGaN®
PackagingBulk
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C9.5A, 38A
Rds On (Max) @ Id, Vgs14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id2.5V @ 2.5mA
Gate Charge (Qg) @ Vgs2.5nC @ 5V
Input Capacitance (Ciss) @ Vds300pF @ 40V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)EPC2105ENG
Related LinksEPC21, EPC2105ENG Datasheet, EPC Distributor
EPC2105ENG Details Description
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