Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-EPC2106ENGRT | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 1,000 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Arrays | |
Series | eGaN® | |
Packaging | Tape & Reel (TR) | |
FET Type | 2 N-Channel (Half Bridge) | |
FET Feature | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 1.7A | |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 2A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 600µA | |
Gate Charge (Qg) @ Vgs | 0.73nC @ 5V | |
Input Capacitance (Ciss) @ Vds | 75pF @ 50V | |
Power - Max | - | |
Mounting Type | Surface Mount | |
Package / Case | Die | |
Supplier Device Package | Die | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | EPC2106ENGRT | |
Related Links | EPC210, EPC2106ENGRT Datasheet, EPC Distributor |
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