EPC EPC2110ENGRT

EPC2110ENGRT picture photo
Mfg. Part Number
EPC2110ENGRT
Manufacturer
Product Category
FETs - Arrays
Brief Description
TRANS GAN 2N-CH 120V BUMPED DIE
Datasheet Download
EPC2110ENGRT.pdf
Availability of EPC2110ENGRT

Available Quantity

6020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.91250
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of EPC2110ENGRT, we specialize in EPC all series electronic components. EPC2110ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2110ENGRT, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
EPC2110ENGRT Order Process
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Specifications of EPC2110ENGRT
Internal Part NumberEIS-EPC2110ENGRT
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1,000
Category Discrete Semiconductor Products
FamilyFETs - Arrays
SerieseGaN®
PackagingTape & Reel (TR)
FET Type2 N-Channel (Dual) Common Source
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C3.4A
Rds On (Max) @ Id, Vgs60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id2.5V @ 700µA
Gate Charge (Qg) @ Vgs0.8nC @ 5V
Input Capacitance (Ciss) @ Vds80pF @ 60V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)EPC2110ENGRT
Related LinksEPC211, EPC2110ENGRT Datasheet, EPC Distributor
EPC2110ENGRT Details Description
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