ON Semiconductor FGH60T65SHD-F155

Mfg. Part Number
Product Category
IGBTs - Single
Brief Description
IGBT Trench Field Stop 650V 120A 349W N-CH Through Hole TO-247 Long Leads Tube New arrival stocks
Datesheet Download
Availability of FGH60T65SHD-F155

Available Quantity

16020 Pieces

Can ship today

Ships from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 10 weeks

Marketing Price
$ 3.00000
Our Price
$ 2.50000



EIS Components is the stocking Distributor of FGH60T65SHD-F155, we specialize in ON Semiconductor all series electronic components. FGH60T65SHD-F155 can be shipped within 24 hours after order. If you have any demands for FGH60T65SHD-F155, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
FGH60T65SHD-F155 Order Process
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Specifications of FGH60T65SHD-F155
Internal Part NumberEIS-FGH60T65SHD-F155
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew with original factory packing
SourceManufacturer direct
WarrantyManufacturer Guarantee
HTS Code8541290095 85412900
Country Of OriginUSA / CN
Standard Packing Quantity30pcs/tube 450pcs/box
Packing MaterialTube and box
IGBT TypeTrench Field Stop
Input TypeStandard
Vce(on) (Max) @ Vge Ic2.1V @ 15V, 60A
Switching Energy1.69mJ (on), 630µJ (off)
Td (on/off) @ 25°C26ns/87ns
Test Condition400V, 60A, 6Ohm, 15V
Current - Collector (Ic) (Max)120A
Current - Collector Pulsed (Icm)180A
Power - Max349W
Reverse Recovery Time (trr)34.6ns
Gate Charge102nC
Dimensions15.87(Max) x 4.82(Max) x 20.82(Max)
TechnologyTrench Field Stop
Package CaseTO-247 (3 pins leads)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole TO247
Alternative replacementsFGH60T65SHD FGH60T65SHDF155 FGH60T65SHD_F155 FGH60T65SHD-F155-ND
Weight0.003 KG
Related LinksFGH60T65, FGH60T65SHD-F155 Datasheet, ON Semiconductor Distributor
FGH60T65SHD-F155 Details Description
FGH60T65SHD use novel field stop IGBT technology, ON Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Key Features Maximum Junction Temperature : TJ = 175 degree C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A 100% of the parts tested for ILM(1) High Input Impedance Fast Switching Tightened Parameter Distribution RoHS Compliant
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