Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-FQN1N60CBU | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | Obsolete / Discontinued | |
Condition | New & Unused, Original Sealed | |
Standard Package | 1,000 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | QFET® | |
Packaging | Bulk | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) | |
Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 150mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 6.2nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 170pF @ 25V | |
Power - Max | 1W | |
Mounting Type | Through Hole | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
Supplier Device Package | TO-92-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | FQN1N60CBU | |
Related Links | FQN1N, FQN1N60CBU Datasheet, Fairchild Semiconductor Distributor |
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