Fairchild Semiconductor FQPF4N80
- Mfg. Part Number
- FQPF4N80
- Manufacturer
- Fairchild Semiconductor
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 800V 2.2A TO-220F
- Datasheet Download
- FQPF4N80.pdf
Availability of FQPF4N80
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- N/A
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of FQPF4N80, we specialize in Fairchild Semiconductor all series electronic components. FQPF4N80 can be shipped within 24 hours after order. If you have any demands for FQPF4N80, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- FQPF4N80 Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
FQPF4N80
| Internal Part Number | EIS-FQPF4N80 | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 1,000 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | QFET® | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) | |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.1A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 880pF @ 25V | |
| Power - Max | 43W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220F | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | FQPF4N80 | |
| Related Links | FQPF, FQPF4N80 Datasheet, Fairchild Semiconductor Distributor | |
FQPF4N80 Details Description
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