Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-GA10JT12-263 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 50 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Tube | |
FET Type | Silicon Carbide, Normally Off | |
FET Feature | Super Junction | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 10A | |
Vgs(th) (Max) @ Id | - | |
Gate Charge (Qg) @ Vgs | - | |
Input Capacitance (Ciss) @ Vds | 1403pF @ 800V | |
Power - Max | 170W | |
Mounting Type | Surface Mount | |
Package / Case | - | |
Supplier Device Package | - | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | GA10JT12-263 | |
Related Links | GA10JT, GA10JT12-263 Datasheet, GeneSiC Semiconductor Distributor |
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