Toshiba Semiconductor & Storage GT30J121(Q)

GT30J121(Q) picture photo
Mfg. Part Number
GT30J121(Q)
Manufacturer
Product Category
IGBTs - Single
Brief Description
IGBT 600V 30A 170W TO3PN
Datasheet Download
GT30J121(Q).pdf
Availability of GT30J121(Q)

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 5.48780
Our Price
Quote by Email

QUANTITY

 

EIS Components is the stocking Distributor of GT30J121(Q), we specialize in Toshiba Semiconductor & Storage all series electronic components. GT30J121(Q) can be shipped within 24 hours after order. If you have any demands for GT30J121(Q), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
GT30J121(Q) Order Process
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Specifications of GT30J121(Q)
Internal Part NumberEIS-GT30J121(Q)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package50
Category Discrete Semiconductor Products
FamilyIGBTs - Single
Series-
PackagingTube
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 30A
Power - Max170W
Switching Energy1mJ (on), 800µJ (off)
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 30A, 24 Ohm, 15V
Reverse Recovery Time (trr)-
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)GT30J121(Q)
Related LinksGT30J, GT30J121(Q) Datasheet, Toshiba Semiconductor & Storage Distributor
GT30J121(Q) Details Description
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