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Toshiba Semiconductor & Storage HN1C01FE-GR(5L,F,T

HN1C01FE-GR(5L,F,T picture photo
Mfg. Part Number
HN1C01FE-GR(5L,F,T
Manufacturer
Product Category
Transistors (BJT) - Arrays
Brief Description
TRANS 2NPN 50V 0.15A ES6
Datasheet Download
HN1C01FE-GR(5L,F,T.pdf
Availability of HN1C01FE-GR(5L,F,T

Available Quantity

9020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.03968
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of HN1C01FE-GR(5L,F,T, we specialize in Toshiba Semiconductor & Storage all series electronic components. HN1C01FE-GR(5L,F,T can be shipped within 24 hours after order. If you have any demands for HN1C01FE-GR(5L,F,T, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
HN1C01FE-GR(5L,F,T Order Process
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Specifications of HN1C01FE-GR(5L,F,T
Internal Part NumberEIS-HN1C01FE-GR(5L,F,T
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package4,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays
Series-
PackagingTape & Reel (TR)
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Power - Max100mW
Frequency - Transition80MHz
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)HN1C01FE-GR(5L,F,T
Related LinksHN1C01FE-, HN1C01FE-GR(5L,F,T Datasheet, Toshiba Semiconductor & Storage Distributor
HN1C01FE-GR(5L,F,T Details Description
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