Toshiba Semiconductor & Storage HN1C03F-B(TE85L,F)

HN1C03F-B(TE85L,F) picture photo
Mfg. Part Number
HN1C03F-B(TE85L,F)
Manufacturer
Product Category
Transistors (BJT) - Arrays
Brief Description
TRANS 2NPN 20V 0.3A SM6
Datasheet Download
HN1C03F-B(TE85L,F).pdf
Availability of HN1C03F-B(TE85L,F)

Available Quantity

8020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.11160
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of HN1C03F-B(TE85L,F), we specialize in Toshiba Semiconductor & Storage all series electronic components. HN1C03F-B(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN1C03F-B(TE85L,F), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
HN1C03F-B(TE85L,F) Order Process
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Specifications of HN1C03F-B(TE85L,F)
Internal Part NumberEIS-HN1C03F-B(TE85L,F)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package3,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays
Series-
PackagingTape & Reel (TR)
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)300mA
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce350 @ 4mA, 2V
Power - Max300mW
Frequency - Transition30MHz
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSM6
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)HN1C03F-B(TE85L,F)
Related LinksHN1C03F-B, HN1C03F-B(TE85L,F) Datasheet, Toshiba Semiconductor & Storage Distributor
HN1C03F-B(TE85L,F) Details Description
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