Infineon Technologies IPB042N10N3 G E8187

IPB042N10N3 G E8187 picture photo
Mfg. Part Number
IPB042N10N3 G E8187
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 100A TO263-3
Datasheet Download
IPB042N10N3 G E8187.pdf
Availability of IPB042N10N3 G E8187

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 1.37504
Our Price
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EIS Components is the stocking Distributor of IPB042N10N3 G E8187, we specialize in Infineon Technologies all series electronic components. IPB042N10N3 G E8187 can be shipped within 24 hours after order. If you have any demands for IPB042N10N3 G E8187, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IPB042N10N3 G E8187 Order Process
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Specifications of IPB042N10N3 G E8187
Internal Part NumberEIS-IPB042N10N3 G E8187
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs4.2 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 150µA
Gate Charge (Qg) @ Vgs117nC @ 10V
Input Capacitance (Ciss) @ Vds8410pF @ 50V
Power - Max214W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPB042N10N3 G E8187
Related LinksIPB042N10, IPB042N10N3 G E8187 Datasheet, Infineon Technologies Distributor
IPB042N10N3 G E8187 Details Description
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