Infineon Technologies IPB12CNE8N G

IPB12CNE8N G picture photo
Mfg. Part Number
IPB12CNE8N G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 85V 67A TO263-3
Datasheet Download
IPB12CNE8N G.pdf
Availability of IPB12CNE8N G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of IPB12CNE8N G, we specialize in Infineon Technologies all series electronic components. IPB12CNE8N G can be shipped within 24 hours after order. If you have any demands for IPB12CNE8N G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IPB12CNE8N G Order Process
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Specifications of IPB12CNE8N G
Internal Part NumberEIS-IPB12CNE8N G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
Standard Package1,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Rds On (Max) @ Id, Vgs12.9 mOhm @ 67A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) @ Vgs64nC @ 10V
Input Capacitance (Ciss) @ Vds4340pF @ 40V
Power - Max125W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-2
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPB12CNE8N G
Related LinksIPB12C, IPB12CNE8N G Datasheet, Infineon Technologies Distributor
IPB12CNE8N G Details Description
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