Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-IPB80N06S2L11ATMA2 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 1,000 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | OptiMOS™ | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 55V | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
Rds On (Max) @ Id, Vgs | 10.7 mOhm @ 40A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 93µA | |
Gate Charge (Qg) @ Vgs | 80nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 2075pF @ 25V | |
Power - Max | 158W | |
Mounting Type | Surface Mount | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Supplier Device Package | PG-TO263-3-2 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | IPB80N06S2L11ATMA2 | |
Related Links | IPB80N06S, IPB80N06S2L11ATMA2 Datasheet, Infineon Technologies Distributor |
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