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Infineon Technologies IPD082N10N3GATMA1

IPD082N10N3GATMA1 picture photo
Mfg. Part Number
IPD082N10N3GATMA1
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 80A TO252-3
Datasheet Download
IPD082N10N3GATMA1.pdf
Availability of IPD082N10N3GATMA1

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.58800
Our Price
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EIS Components is the stocking Distributor of IPD082N10N3GATMA1, we specialize in Infineon Technologies all series electronic components. IPD082N10N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPD082N10N3GATMA1, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IPD082N10N3GATMA1 Order Process
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Specifications of IPD082N10N3GATMA1
Internal Part NumberEIS-IPD082N10N3GATMA1
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package2,500
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8.2 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id3.5V @ 75µA
Gate Charge (Qg) @ Vgs55nC @ 10V
Input Capacitance (Ciss) @ Vds3980pF @ 50V
Power - Max125W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPD082N10N3GATMA1
Related LinksIPD082N1, IPD082N10N3GATMA1 Datasheet, Infineon Technologies Distributor
IPD082N10N3GATMA1 Details Description
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