Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-IPS10N03LA G | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Production Status (Lifecycle) | Obsolete / Discontinued | |
Condition | New & Unused, Original Sealed | |
PCN Obsolescence/ EOL | Multiple Devices 04/Jun/2009 | |
Standard Package | 1,500 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | OptiMOS™ | |
Packaging | Tube | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 25V | |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | |
Rds On (Max) @ Id, Vgs | 10.4 mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 20µA | |
Gate Charge (Qg) @ Vgs | 11nC @ 5V | |
Input Capacitance (Ciss) @ Vds | 1358pF @ 15V | |
Power - Max | 52W | |
Mounting Type | Through Hole | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Supplier Device Package | PG-TO251-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | IPS10N03LA G | |
Related Links | IPS10N, IPS10N03LA G Datasheet, Infineon Technologies Distributor |
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