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International Rectifier (Infineon Technologies Americas Corp.) IRF1010EZPBF

IRF1010EZPBF picture photo
Mfg. Part Number
IRF1010EZPBF
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 60V 75A TO-220AB
Datasheet Download
IRF1010EZPBF.pdf
Availability of IRF1010EZPBF

Available Quantity

5966 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.94691
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EIS Components is the stocking Distributor of IRF1010EZPBF, we specialize in International Rectifier (Infineon Technologies Americas Corp.) all series electronic components. IRF1010EZPBF can be shipped within 24 hours after order. If you have any demands for IRF1010EZPBF, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IRF1010EZPBF Order Process
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Specifications of IRF1010EZPBF
Internal Part NumberEIS-IRF1010EZPBF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage Integrated Circuits (HVIC Gate Drivers)
Design ResourcesIRF1010EZ Saber Model
IRF1010EZ Spice Model
PCN Assembly/OriginBackend Wafer Transfer 23/Oct/2013
PCN PackagingPackage Drawing Update 19/Aug/2015
Standard Package50
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesHEXFET®
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs8.5 mOhm @ 51A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) @ Vgs86nC @ 10V
Input Capacitance (Ciss) @ Vds2810pF @ 25V
Power - Max140W
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IRF1010EZPBF
Related LinksIRF101, IRF1010EZPBF Datasheet, International Rectifier (Infineon Technologies Americas Corp.) Distributor
IRF1010EZPBF Details Description
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