Vishay/Siliconix IRF744
- Mfg. Part Number
- IRF744
- Manufacturer
- Vishay/Siliconix
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 450V 8.8A TO-220AB
- Datasheet Download
- IRF744.pdf
Availability of IRF744
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- N/A
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IRF744, we specialize in Vishay/Siliconix all series electronic components. IRF744 can be shipped within 24 hours after order. If you have any demands for IRF744, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IRF744 Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IRF744
| Internal Part Number | EIS-IRF744 | |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| EDA / CAD Models | Download from Accelerated Designs | |
| Standard Package | 50 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 450V | |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) | |
| Rds On (Max) @ Id, Vgs | 630 mOhm @ 5.3A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1400pF @ 25V | |
| Power - Max | 125W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220AB | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IRF744 | |
| Related Links | IRF, IRF744 Datasheet, Vishay/Siliconix Distributor | |
IRF744 Details Description
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