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International Rectifier (Infineon Technologies Americas Corp.) IRF7473TRPBF

IRF7473TRPBF picture photo
Mfg. Part Number
IRF7473TRPBF
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 6.9A 8-SOIC
Datasheet Download
IRF7473TRPBF.pdf
Availability of IRF7473TRPBF

Available Quantity

13020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.56375
Our Price
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EIS Components is the stocking Distributor of IRF7473TRPBF, we specialize in International Rectifier (Infineon Technologies Americas Corp.) all series electronic components. IRF7473TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7473TRPBF, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IRF7473TRPBF Order Process
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Specifications of IRF7473TRPBF
Internal Part NumberEIS-IRF7473TRPBF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage Integrated Circuits (HVIC Gate Drivers)
Design ResourcesIRF7473TRPBF Saber Model
IRF7473TRPBF Spice Model
PCN PackagingPackage Drawing Update 19/Aug/2015
Standard Package4,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesHEXFET®
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.9A (Ta)
Rds On (Max) @ Id, Vgs26 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) @ Vgs61nC @ 10V
Input Capacitance (Ciss) @ Vds3180pF @ 25V
Power - Max2.5W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IRF7473TRPBF
Related LinksIRF747, IRF7473TRPBF Datasheet, International Rectifier (Infineon Technologies Americas Corp.) Distributor
IRF7473TRPBF Details Description
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