Ship from: HONGKONG
								Date Code: Newest Date Code
								Manufacturer lead time 6 weeks
| Internal Part Number | EIS-IRFB4110PBF | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) | |
| Design Resources | IRFB4110PBF Saber Model IRFB4110PBF Spice Model | |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Qualification Wafer Source 01/Apr/2014 | |
| PCN Packaging | Package Drawing Update 19/Aug/2015 | |
| Standard Package | 50 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | HEXFET® | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 210nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 9620pF @ 50V | |
| Power - Max | 370W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220AB | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IRFB4110PBF | |
| Related Links | IRFB4, IRFB4110PBF Datasheet, International Rectifier (Infineon Technologies Americas Corp.) Distributor | |
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