International Rectifier (Infineon Technologies Americas Corp.) IRFB5615PBF

IRFB5615PBF picture photo
Mfg. Part Number
IRFB5615PBF
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 150V 35A TO-220AB
Datasheet Download
IRFB5615PBF.pdf
Availability of IRFB5615PBF

Available Quantity

5919 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.95676
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of IRFB5615PBF, we specialize in International Rectifier (Infineon Technologies Americas Corp.) all series electronic components. IRFB5615PBF can be shipped within 24 hours after order. If you have any demands for IRFB5615PBF, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IRFB5615PBF Order Process
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Specifications of IRFB5615PBF
Internal Part NumberEIS-IRFB5615PBF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage Integrated Circuits (HVIC Gate Drivers)
Design ResourcesIRFB5615PBF Saber Model
IRFB5615PBF Spice Model
PCN Assembly/OriginMosfet Backend Wafer Processing 23/Oct/2013
PCN PackagingPackage Drawing Update 19/Aug/2015
Standard Package50
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs39 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) @ Vgs40nC @ 10V
Input Capacitance (Ciss) @ Vds1750pF @ 50V
Power - Max144W
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IRFB5615PBF
Related LinksIRFB5, IRFB5615PBF Datasheet, International Rectifier (Infineon Technologies Americas Corp.) Distributor
IRFB5615PBF Details Description
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